Extrapolation Of Dc Device Lifetime In Body-Floating And Body-Grounded Soi Mosfets

Mj Sherony,Da Antoniadis,Jw Sleight,Kr Mistry

Fish Camp, CA（1996）

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Abstract

The extrapolated dc lifetime of both body-floating and body-grounded partially-depleted SOI n-MOSFETs was demonstrated to be similar when stress conditions corresponding to realistic service conditions were used. Under these stress conditions, no special SOI-related effects exist and floating-body devices can be used for accelerated lifetime measurements

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Key words

MOSFET,life testing,silicon-on-insulator,DC lifetime extrapolation,accelerated measurement,body-floating device,body-grounded device,partially-depleted SOI n-MOSFET,substrate current,

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