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Encapsulated tapered active layer 1.3 μm Fabry-Perot laser operating at high temperature

A Lestra,P Aubert,V Colson,Jeanlouis Gentner,Emmanuel Grard,Jeanluc Lafragette,L Le Gouezigou,A Pinquier,L Roux,D Toullier,Denis Tregoat,B Fernier

Conf. Publ. No.: 448)（1997）

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Abstract
High temperature operation at 1.3 μm Fabry-Perot lasers with tapered active region is reported for silicone encapsulated chips. Burn-in tests demonstrate that the components are fully compatible with non-sealed low-cost packaging
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Key words
semiconductor device packaging,μm fabry-perot laser,1.3 mum,mqw lasers,encapsulated tapered active layer,high temperature,multiquantum well lasers,optical transmitters
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