Characterization of the silicon nitride-thermal oxide interface in ONO structures by ELS, XPS, ellipsometry, and numerical simulation [SONOS EEPROM]

V A Gritsenko,Yu N Morokov,Yu N Novikov, I P Petrenko, S N Svitasheva,Hausan Wong,R Kwok,Raymond Chan

Microelectronics, 1997. Proceedings., 1997 21st International Conference（1997）

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摘要

Using electron energy loss spectroscopy (ELS), XPS, and ellipsometry measurements, large amount of Si-Si bonds at Si3N4/thermal SiO2 interface are identified. Abnormally large value of refractive index (n=2.1) in the Si 3N4/SiO2 interface layer was obtained. The effective width of Si-rich interfacial layer is estimated to be about 5-10 Å. The excess silicon at Si3N4/SiO2 interface was created by replacing nitrogen with oxygen during the oxidation of Si3N 4. The abnormally large electron capturing at Si3N 4/SiO2 interface observed previously and the accumulation of positive charge at top interface of nitrided oxide under ionizing irradiation are explained with the existence of Si-Si bonds at Si3N4/SiO2 interface

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关键词

eprom,x-ray photoelectron spectra,electron spectroscopy,electron traps,elemental semiconductors,ellipsometry,leakage currents,oxidation,refractive index,semiconductor-insulator-semiconductor devices,silicon,silicon compounds,5 to 10 angstrom,els,ono structures,sonos eeprom,si-sio2-si3n4-sio2,xps,dielectric thin films,electron capturing,electron energy loss spectroscopy,ionizing irradiation,nitride-thermal oxide interface,numerical simulation,positive charge accumulation,spectroscopy,nitrogen,electrons

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