Temperature Dependence Of The Electrical Performance Of Srbi2ta2o9 For Non-Volatile Memory Applications

Dj Taylor,Re Jones,Py Chu,P Zurcher, B White,S Zafar, Sj Gillespie

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium（1996）

Cited 0|Views0

No score

Abstract

Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2P(r)), the non-volatile polarization (P-nv), and the coercive field (E-c) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2Pr and P-nv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 degrees C).

Translated text

Key words

bismuth compounds,ferroelectric storage,strontium compounds,0 to 70 C,SBT,SrBi2Ta2O9,coercive field,current voltage characteristics,electrical properties,fatigue resistance,ferroelectric nonvolatile memory,nonvolatile polarization,remanent polarization,retention,temperature dependence

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined