Temperature Dependence Of The Electrical Performance Of Srbi2ta2o9 For Non-Volatile Memory Applications
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium(1996)
Abstract
Studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include: (a) the remanent polarization (2P(r)), the non-volatile polarization (P-nv), and the coercive field (E-c) all of which are studied as functions of the pulse amplitude; (b) fatigue resistance of 2Pr and P-nv; (c) the retention; and (d) the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 degrees C).
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Key words
bismuth compounds,ferroelectric storage,strontium compounds,0 to 70 C,SBT,SrBi2Ta2O9,coercive field,current voltage characteristics,electrical properties,fatigue resistance,ferroelectric nonvolatile memory,nonvolatile polarization,remanent polarization,retention,temperature dependence
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