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Thermally induced current constriction in III-V heterojunction bipolar transistors

Koenig, E.,Schneider, J.,Seiler, U.,Erben, U.

Minneapolis, MN（1994）

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Abstract
The current through HBTs with different emitter lengths is shown to be constricted to practically identical areas as a result of the lateral temperature distribution and negative temperature coefficient of the base-emitter voltage
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Key words
temperature distribution,III-V HBT,base-emitter voltage,emitter lengths,heterojunction bipolar transistors,lateral temperature distribution,negative temperature coefficient,thermally induced current constriction,
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