Analysis and computer simulation of BJMOSFET frequency characteristics
ASIC, 2003. Proceedings. 5th International Conference（2003）
Abstract
The high frequency equivalent model of new semiconductor device - bipolar junction MOS field effect transistor (BJMOSFET) was proposed. Various kinds of parasitic electric capacity of BJMOSFET and its influences were qualitative analyzed. By utilizing the existing components and parts in PSPICE9 device storehouse, the BJMOSFET frequency characteristic equivalent circuit that was used to analogue analyses was set up. Through drawing model parameters, using multi-transient analytic approach of PSPICE9, the frequency characteristic of BJMOSFET was simulated. Compared with the traditional MOSFET at same structure parameters and equal external condition, BJMOSFET have less total electric capacity, wider frequency band, good transient characteristic, very little distortion, and better frequency response characteristics.
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Key words
mosfet,spice,bipolar transistors,semiconductor device models,bjmosfet,pspice9 device storehouse,bipolar junction mos field effect transistor,computer simulation,frequency band,frequency characteristics,model parameters,multitransient analytic approach,parasitic electric capacity,semiconductor device,structure parameters,transient characteristic,field effect transistor,high frequency,frequency response,equivalent circuit,semiconductor devices
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