MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses
international semiconductor device research symposium（2003）
摘要
A 5-period self-assembled Ge/Si quantum dots with 3 nm wetting (quantum wells) grown by UHV/CVD is fabricated into MIS tunneling diodes with low temperature (50 °C) liquid phase deposition (LPD) oxide and oxynitride. The dark current of MIS tunneling diode is dominated by thermal generation of electron-hole pairs through the defects in the depletion region and at the Si/SiO2 interface. Using oxynitride as gate dielectric, the operating temperature reaches 140 K for 3∼10μm and is up to 200 K for 2∼3 μm detection.
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关键词
cvd coatings,ge-si alloys,mis devices,dark conductivity,infrared detectors,liquid phase deposited coatings,photodetectors,self-assembly,semiconductor materials,semiconductor quantum dots,semiconductor quantum wells,140 k,2 to 10 micron,3 nm,cvd,ge-si,lpd,mis tunneling diodes,mos ge/si quantum dot,si/sio2 interface,chemical vapour deposition,depletion region,electron-hole pairs,gate dielectric,infrared photodetectors,liquid phase deposition,quantum wells,thermal generation,wetting layer response,self assembly,quantum dot,quantum well,dark current
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