Reduced 1/f noise at 293 K in 0.55 /spl mu/m p-Si/sub 0.3/Ge/sub 0.7/ hetero-MOSFETs

M Myronov,S Durov,O A Mironov,D R Leadley,T Hackbarth,G Hock,H J Herzog,U Konig,E H C Parker

Estoril, Portugal（2003）

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摘要

For the first time, we have demonstrated reduced 1/f, low-frequency (LF), noise in sub-/spl mu/m metamorphic high Ge content p-Si/sub 0.3/Ge/sub 0.7/ MOSFETs at 293 K. Three times lower LF noise over the 1-100 Hz range at V/sub DS/ = -50 mV and V/sub G/ - V/sub th/ = -1.5 V was measured for a 0.55 /spl mu/m effective gate length p-Si/sub 0.3/Ge/sub 0.7/ MOSFET compared with p-Si MOSFET. Performed quantitative analysis demonstrates the importance of carrier number fluctuations (CNF) and correlated mobility fluctuations (CMF) components of 1/f noise for p-Si surface channel MOSFET, and absence of CMF for p-Si/sub 0.3/Ge/sub 0.7/ buried channel MOSFETs.

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关键词

1/f noise,ge-si alloys,mosfet,carrier density,carrier mobility,semiconductor device noise,semiconductor materials,-1.5 v,-50 mv,0.55 micron,1 to 100 hz,1/f noise reduction,293 k,sige,buried channel mosfet,carrier number fluctuations,correlated mobility fluctuations,effective gate length,low-frequency noise,metamorphic mosfet,p-sige hetero-mosfet

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