Design and test at room temperature of the first silicon drift detector with on-chip electronics
San Francisco, CA, USA（1994）
摘要
The layout and the performance of the first silicon drift detector with on-chip electronics are presented. The peculiar characteristics of this device are the small detector capacitance and the direct integration of the front-end transistor on the detector chip. High resolution spectroscopy measurements carried out at room temperature are shown. The topology of a novel multianode drift detector suited for high count rate experiments is introduced.<>
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关键词
capacitance,detector circuits,elemental semiconductors,monolithic integrated circuits,nuclear electronics,silicon radiation detectors,si,detector capacitance,detector chip,drift detector,high count rate experiments,high resolution spectroscopy measurements,multianode drift detector,onchip electronics,room temperature operation,front end,room temperature,chip
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