Thermal nitride gate FET technology for VLSI devices

Ito, T., Nozaki, T., Ishikawa, H.,Fukukawa, Y.

Solid-State Circuits Conference. Digest of Technical Papers. 1980 IEEE International（1980）

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摘要

The use of thermally-grown silicon nitride films with a nominal thickness of 70Å as a gate insulator for submicron-channel IGFETs will be covered. The approach afforded high transconductance and elimination of short-channel effects.

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short channel effect

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