Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

Kai Grurmann,Martin Herrmann,F Gliem,Hagen Schmidt, Gilbert Leibeling,H Kettunen,V Ferletcavrois

Radiation Effects Data Workshop（2012）

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摘要

16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

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关键词

dram chips,nand circuits,flash memories,radiation hardening (electronics),ddr3 sdram memory,let,mbu,nand-flash,sefi mitigation,heavy ion irradiation,heavy ion sensitivity,size 25 nm,storage capacity 16 gbit,storage capacity 32 gbit,storage capacity 4 gbit,silicon,plastics,annealing

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