Analysis of total dose tolerance of LOCOS isolated MOSFET by 2-D self-consistent simulations
Nuclear Science, IEEE Transactions（2002）
摘要
The total dose tolerance of parasitic LOCOS field transistors is analyzed using two-dimensional (2-D) self-consistent simulations. The influence of process parameters such as the substrate doping level is examined through both experimental and simulation results to improve the understanding of ionizing effects on isolation.
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关键词
MOSFET,X-ray effects,isolation technology,leakage currents,oxidation,radiation hardening (electronics),semiconductor device models,10 keV,2-D self-consistent simulations,5 to 20 krad,LOCOS isolated MOSFET,Si-SiO2,Si-SiO2 interface,X-ray irradiation,field oxidation,ionizing effects,isolation process sequence,numerical simulations,parasitic LOCOS field transistors,radiation hardening,radiation-induced leakage current,substrate doping level,total dose tolerance
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