Noise spectroscopy of semiconductor materials and devices
Microelectronics, 2002. MIEL 2002. 23rd International Conference（2002）
摘要
The noise spectroscopy in time and frequency domain is used to give information on single carrier trapping and charge carrier transport in MOSFETs, quantum dots, conducting film resistors, capacitors and single crystals. Defects in the vicinity of the p-n junction and MOS channel create 1/f noise, burst noise or RTS noise. The sources of fluctuation are quantum transitions of carriers between localised states and energy bands, carrier number and mobility. Noise reliability indicators are used to assess the device quality and reliability.
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关键词
1/f noise,ii-vi semiconductors,mosfet,burst noise,cadmium compounds,carrier density,carrier mobility,electric noise measurement,electrolytic capacitors,electron traps,frequency-domain analysis,hole traps,semiconductor device noise,semiconductor device reliability,semiconductor quantum dots,thick film resistors,thin film resistors,time-domain analysis,cdte,cdte single crystals,mos channel,rts noise,ta-ta2o5,capacitors,carrier number,carrier quantum transitions,charge carrier transport,conducting film resistors,defects,device quality,device reliability,energy bands,fluctuation sources,frequency domain noise spectroscopy,localised states,noise reliability indicators,noise spectroscopy,p-n junction,quantum dots,semiconductor devices,semiconductor materials,single carrier trapping,single crystals,tantalum capacitors,time domain noise spectroscopy,spectroscopy,charge carriers,frequency domain analysis,frequency domain,resistors,single crystal,quantum dot,p n junction
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