BANCMOS: a 25 V mixed analog-digital BiCMOS process

Jon D Kendall,B Rioux,Paul Kempf,L Bourbonnais, Michael J Feeley,R A Hadaway

Minneapolis, MN（1990）

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摘要

A 25-V mixed analog-digital BiCMOS process is presented that provides seven types of transistors (five bipolar, two MOS) with a linear polysilicon capacitor and polysilicon resistor in double-level metal using only 19 masks. Device and circuit performance is summarized. This manufacturable process with a large device set capable of 25-V operation and reasonable speed has proven itself useful for high-performance applications

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关键词

bimos integrated circuits,application specific integrated circuits,integrated circuit technology,25 v,bancmos,circuit performance,device performance,double-level metal,high-performance applications,linear polysilicon capacitor,mixed analog-digital bicmos process,polysilicon resistor

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