1.3 W CW, diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm

Stephen P Obrien,D Mehuys, J S Major,Robert J Lang,R Parke,D F Welch,Donald R Scifres

Electronics Letters （1994）

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摘要

High power, monolithically integrated master oscillator flared amplifiers are fabricated which operate at approximately 863 nm to an output power greater than 1.3W CW with a far field pattern consisting of a single, diffraction-limited lobe.

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关键词

integrated optics,laser transitions,semiconductor lasers,1.3 w,1.3 w cw,863 nm,gaas-algaas,diffraction-limited monolithically integrated master oscillator flared amplifier,far field pattern,high power,output power,single diffraction-limited lobe,diffraction,oscillators,amplifiers

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