A D-band monolithic low noise amplifier

Hsiaolun Wang,T N Ton,K L Tan,D Garske,G S Dow,J Berenz,M W Pospieszalski,S K Pan

Gallium Arsenide Integrated Circuit（1997）

Cited 9|Views4

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Abstract

A D-band monolithic two-stage low-noise amplifier (LNA) has been developed using 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs low-noise high-electron-mobility transistor (HEMT) technology. The amplifier demonstrates a gain of 12 dB at 112 to 115 GHz with a noise figure of 6.3 dB when biased for high gain, and a noise figure of 5.5 dB is achieved with an associated gain of 10 dB at 113 GHz when biased for low noise figure. The monolithic LNA is a first-part success without any tuning on the matching structures. To the authors' knowledge, this is the first reported monolithic amplifier operating above 100 GHz using three terminal devices.<>

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Key words

iii-v semiconductors,mmic,aluminium compounds,field effect integrated circuits,gallium arsenide,high electron mobility transistors,indium compounds,microwave amplifiers,10 db,112 to 115 ghz,12 db,5.5 db,6.3 db,algaas-ingaas-gaas,d-band monolithic low noise amplifier,low-noise hemt technology,monolithic amplifier,three terminal devices,noise figure,high electron mobility transistor,low noise amplifier

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