Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth

Kiely, P.A.,Evaldsson, P.A.,Cooke, P.,Taylor, G.W.

Electronics Letters（1993）

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摘要

High speed capability up to 14 GHz is reported for the inversion channel HFET utilizing the inversion channel device structure. The transistor is fabricated from the same epitaxial growth and with the same fabrication technology as previously used to demonstrate the vertical cavity Double Heterostructure Opto-Electronic Switching (DOES) Laser

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关键词

field effect integrated circuits,single epitaxial growth,inversion channel hfet,14 ghz,epitaxial growth,transistor,inversion channel technology device structure,surface emitting laser,field effect transistors,fabrication technology,molecular beam epitaxial growth,semiconductor lasers,integrated optoelectronics,unity current gain frequency,oeic,etching,frequency

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