A 54-GHz distributed amplifier with 6-V/sub PP/ output for a 40-Gb/s LiNbO/sub 3/ modulator driver

H. Shigematsu, M. Sato,T. Hirose,Y. Watanabe

IEEE Journal of Solid-State Circuits（2002）

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摘要

We have developed a distributed amplifier for a LiNbO/sub 3/ modulator driver using double-doped AlGaAs-InGaAs-AlGaAs pseudomorphic high electron mobility transistors (p-HEMTs). By using a stabilization and negative resistance control technique with source inductance and grounded coplanar waveguided lines, we obtained a gain of 15 dB, a bandwidth of 54 GHz, and 6-V/sub PP/ output. These results in...

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关键词

Distributed amplifiers,Driver circuits,PHEMTs,Electron mobility,HEMTs,MODFETs,Inductance,Coplanar waveguides,Gain,Bandwidth

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