A method for predicting IGBT junction temperature under transient condition
Industrial Electronics, 2002. ISIE 2002. Proceedings of the 2002 IEEE International Symposium （2008）
摘要
In this paper, a method to predict junction temperature of the solid-state switch under transient condition is presented. The method is based on the thermal model of the switch and instantaneous measurement of the energy loss in the device. The method for deriving thermal model parameters from the manufacturers data sheet is derived and verified. A simulation work has been carried out on a single IGBT under different conditions using MATLAB/SIMULINK. The results show that the proposed method is effective to predict the junction temperature of the solid-state device during transient conditions and is applicable to other devices such as diodes and thyristors.
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关键词
insulated gate bipolar transistors,power semiconductor switches,igbt junction temperature,solid-state device,solid-state switch,transient condition,temperature measurement,switches,mathematical model,solid state switch,solid state device
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