Improved performance of ultra-thin HfO/sub 2/ CMOSFETs using poly-SiGe gate

Qiang Lu,Hideki Takeuchi,Xiaofan Meng,T J King,Chenming Hu,Keiji Onishi,Hagju Cho, Jaesik Lee

Honolulu, HI, USA（2002）

引用 10|浏览3

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摘要

Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin HfO/sub 2/ gate dielectric. Compared with poly-Si, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000/spl deg/C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to reduce EOT. Therefore, the use of poly-SiGe as the gate material is effective for improving the performance of ultra-thin HfO/sub 2/ CMOS transistors.

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关键词

cmos integrated circuits,ge-si alloys,mosfet,annealing,dielectric thin films,hafnium compounds,interface states,leakage currents,1000 degc,hfo/sub 2/,si interface quality,sige,gate depletion effect,gate dielectric eot,low gate leakage,poly-sige gate,ultra-thin hfo/sub 2/ cmosfets,ultra-thin hfo/sub 2/ gate dielectric,boron,tin,temperature,dielectric materials

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