Waveguide HBT electroabsorption modulators: devices and circuits

T Reimann, A Schneider,S Neumann,Andreas Stohr,Dieter Jager,F J Tegude

Stockholm（2002）

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摘要

We show the monolithic integration of an HBT and EAM which are merged to a combined device able to operate as an electronic and optical component (HBT-EAM) simultaneously. Comparison to a pure EAM made from the same InP-based layer stack gives an improved optical modulation contrast up to 20 GHz. To demonstrate the concept, a differential amplifier is built which results in a voltage gain of 8 at 2.55 GHz, limited mainly due to a load resistor of 500 Ω. To improve optical modulation an InGaAlAs base is realized to give a better contrast of up to 10 dB, while the DC current gain is 3.5 and has to be optimized

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关键词

differential amplifiers,electro-optical modulation,electroabsorption,heterojunction bipolar transistors,indium compounds,integrated optoelectronics,microwave photonics,optical waveguides,2.55 ghz,20 ghz,eam,hbts,ingaalas,ingaalas base,inp,inp-based layer stack,combined device,differential amplifier,electroabsorption waveguide modulator,monolithic optoelectronic integration,optical modulation contrast,waveguide hbt electroabsorption modulators,stimulated emission,resistors,voltage,optical modulator

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