Suppression of low frequency oscillations for high gain GaAs amplifiers

Tadashi Koketsu,Yoshihiro Hatta,Nami Matsunaga,Mahmood Arai, Youhei Kawada,Atsushi Takai,Yasunari Umemoto, Hiroshi Matsuda

Gallium Arsenide Integrated Circuit（1991）

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Abstract

Devices to suppress low frequency noise have been developed. The devices have recess etched tracks and buried p-type layers to improve the isolation between devices. Fabricated GaAs ICs have been applied to a 2.4 Gb/s optical transmission system and have achieved a minimum optical received power of -33.2 dBm.<>

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Key words

iii-v semiconductors,amplifiers,gallium arsenide,linear integrated circuits,optical communication equipment,2.4 gbit/s,gaas,buried p-type layers,isolation,low frequency oscillations,optical received power,optical transmission system,recess etched tracks,low frequency noise,low frequency oscillation

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