High accuracy measurements of quantized Hall resistance ratios R/sub K/(i)/R/sub K/ (2i) for i=1 and 2 in GaAs and silicon

A Hartland,K S Jones,J M Williams, Mark Davies,B L Gallagher,Trina Falck Galloway,M Henini,O H Hughes

Ottawa, Ontario, Canada（1990）

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摘要

Indirect measurements of the quantized Hall resistance of three GaAs devices confirm that within a combined relative uncertainty (1 sigma ) of about 15 parts in 10/sup 9/, the ratio R/sub K/(i)/R/sub K/ (2i) for i=1 and 2 is exactly 2. A cryogenic current comparator bridge has been constructed to compare directly R/sub K/(2) in GaAs and R/sub K/(4) in Si with a relative uncertainty of 1 part in 10/sup 9/.<>

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关键词

iii-v semiconductors,bridge instruments,electric resistance measurement,elemental semiconductors,gallium arsenide,measurement standards,p-n heterojunctions,quantum hall effect,semiconductor quantum wells,silicon,gaas,si,cryogenic current comparator bridge,p-n heterostructure,quantized hall resistance ratios,quantum well structure,temperature,resistors,uncertainty,physics

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