Effects of neutron irradiation on GaAs/AlGaAs heterojunction bipolar transistors

Song, Y.,Kim, M.E.,Oki, A.K.,Hafizi, M.E.

Nuclear Science, IEEE Transactions（1989）

Cited 31|Views1

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Abstract

The effects of neutron irradiation on 3- mu m-emitter, self-aligned-base, ohmic metal GaAs/AlGaAs heterojunction bipolar transistors and ICs based on molecular beam epitaxy have been experimentally and analytically investigated at fluence levels up to 1.3*10/sup 14/ n/cm/sup 2/. Devices with high DC current gain, beta , exhibited higher sensitivity to neutron irradiation than those with low beta ....

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Key words

III-V semiconductors,aluminium compounds,bipolar integrated circuits,digital integrated circuits,gallium arsenide,heterojunction bipolar transistors,integrated circuit testing,neutron effects,semiconductor device testing,DC current gain,GaAs-AlGaAs heterojunction bipolar transistor,Messenger-Spratt relation,digital circuit high-speed performance,divide-by-two digital IC,emitter edge recombination,molecular beam epitaxy,neutron fluence,neutron irradiation effects,neutron sensitivity,parasitic base current components,semiconductors,transistor RF characteristic

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