ECC with increased hard error correction capability for memory reliability improvement
Non-Volatile Memory Technology Symposium（2014）
摘要
Emerging non-volatile memories such as PCRAMs, MRAMs/STT-MRAMs, FRAMs, and RRAMs are promising candidates for embedded memories in upcoming digital systems. Due to their non-volatility, low-power consumption, and scalability potential, they are best suited in applications like smartphones, tablets, wearable electronics, and sensor nodes. Unfortunately, despite all advantages they offer, emerging non-volatile memories pose some peculiar characteristics like limited endurance and/or variable data retention time. This paper proposes repair mechanism based on a well-known SEC-DED code which can significantly increase the reliability of embedded non-volatile memories.
更多查看译文
关键词
error correction,integrated circuit reliability,low-power electronics,maintenance engineering,random-access storage,ecc,fram,pcram,rram,sec-ded code,stt-mram,digital systems,embedded nonvolatile memories,hard error correction capability,low-power consumption,memory reliability improvement,repair mechanism,scalability potential,sensor nodes,smartphones,tablets,variable data retention time,wearable electronics
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要