A 0.15µm gate InAlN/GaN HEMT with thin barrier layer
Electron Devices and Solid-State Circuits（2014）
Abstract
High quality thin barrier layer In0.18Al0.82N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 μm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-off performance. A high transconductance of 482 mS/mm and current gain cutoff frequency of 80GHz were measured without de-embedding.
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Key words
iii-v semiconductors,mocvd,aluminium compounds,gallium compounds,high electron mobility transistors,indium compounds,semiconductor device manufacture,wide band gap semiconductors,hemt,in0.18al0.82n-gan,drain current,frequency 80 ghz,high transconductance,metal-organic chemical vapor deposition,size 0.15 mum,thin barrier layer,zero gate bias,inaln/gan hemt,millimeter-wave,thin barrier,millimeter wave
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