Top-Gated Indium–Zinc–Oxide Thin-Film Transistors With In Situ Al2O3/HfO2 Gate Oxide
Electron Device Letters, IEEE (2014)
Abstract
We report on top-gated indium-zinc-oxide (IZO) thin-film transistors (TFTs) with a 3-nm layer of aluminum between the IZO active layer and high-k HfO2 gate insulator. A series of anneals at 300°C was used to convert the Al metal into Al2O3, resulting in high-performance top-gated TFTs. The 8-h-annealed TFT with Al layer has a threshold voltage |VT| <; 0.5 V, an ON/OFF ratio of 1 × 107, a subthreshold slope (SS) of 0.14 V/decade, and a saturation mobility μs ~115 cm2/V · s in devices with LG = 50μm gate length. For smaller devices with LG = 5 μm, the threshold voltage and SS are similar, but the ON/OFF ratio and mobility are lower. Cross-sectional TEM images and C-VG characteristics with little hysteresis confirm that the thin Al layer, converted in situ into Al2O3, can protect the IZO channel during processing and produce a good high-k gate-stack.
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Key words
aluminium compounds,hafnium compounds,high-k dielectric thin films,indium compounds,semiconductor device models,thin film transistors,transmission electron microscopy,zinc compounds,Al2O3HfO2,C-VG characteristics,IZO active layer,IZO channel,InZnO,ON-OFF ratio,aluminum,cross-sectional TEM images,high-k HfO2 gate insulator,high-k gate-stack,hysteresis,saturation mobility,size 3 nm,size 5 mum,size 50 mum,temperature 300 C,threshold voltage,time 8 h,top-gated IZO thin-film transistors,top-gated indium-zinc-oxide TFT,Indium zinc oxide,aluminum oxide,aluminum oxide.,in-situ process,thin film transistors,top gate
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