Novel extraction of emitter resistance of SiGe HBTs from forward-Gummel measurements

Ji Yang,Jun Fu,Yabin Sun,Yudong Wang,Wei Zhou,Wei Zhang,Jie Cui,Gaoqing Li,Zhihong Liu

Electron Devices and Solid-State Circuits（2014）

Cited 1|Views20

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Abstract

A simple dc method for determining the emitter series resistances of bipolar transistors from the measured forward-Gummel characteristics is proposed. The method is successfully applied to a set of SiGe HBTs with different sizes, which have been fabricated and measured over a large temperature range. As a result, the temperature scaling and geometric scaling characteristics of the extracted emitter series resistances are analyzed and discussed.

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Key words

ge-si alloys,heterojunction bipolar transistors,hbt,sige,emitter series resistance extraction,forward-gummel measurement,geometric scaling characteristics,heterojunction bipolar transistor,simple dc method,temperature scaling characteristics,emitter resistance,forward-gummel measurements,scalble model,sige hbt

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