Bandgap voltage reference and temperature sensor in novel SOI technology
Signals and Electronic Systems（2014）
Abstract
A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.
MoreTranslated text
Key words
circuit simulation,diodes,energy gap,network synthesis,reference circuits,silicon-on-insulator,temperature measurement,temperature sensors,ptat,soi technology,bandgap voltage reference circuit,chip to chip fabrication,circuit design,diode model,proportional to absolute temperature,temperature coefficient,temperature sensor,voltage 1.27 v,voltage 10 mv,band gap
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined