Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
Electron Device Letters, IEEE （2014）
Abstract
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
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Key words
gadolinium,indium compounds,integrated circuit reliability,random-access storage,silicon compounds,tin compounds,gd:sio2,insno,rram devices,schottky emission,conduction current mechanism,current fitting,high resistance states,low resistance states,oxygen absorbance,oxygen accumulation effect,redox reaction,reliability tests,resistance random access memory,resistive switching,oxygen accumulation,rram,rram.,indium tin oxide,resistance,electrodes,silicon,tin,switches
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