A 110GHz GaAs MHEMT LNA MMIC

Zhangjian,Wanglei,Weibo Wang,Chengwei,Yaohui Kang,Haiyan Lu,Oupeng Li,Guohua Gu,Zhigang Wang,Xu Ruimin

Communication Problem-Solving（2014）

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摘要

This paper presents the development of 110GHz monolithic low-noise amplifier (LNA) using 100 nm In0.52Al0.48As/In0.53Ga0.47As GaAs metamorphic high electron mobility transistors (MHEMTs) technology. The MHEMT technology features an extrinsic fT of 220GHz and an extrinsic transconduction gm,max of 940mS/mm. The LNA is consisted by 4 stages 2×20um gate width transistors. The amplifier demonstrates a gain of 17.7dB at 110GHz with a noise figure of 4.3dB when biased for high gain, and a noise figure of 3.6dB is achieved with an associated gain of 16.6dB at 110GHz when biased for low-noise figure. The chip area is 2.7mm×1.4mm.

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关键词

iii-v semiconductors,mmic amplifiers,gallium arsenide,high electron mobility transistors,indium compounds,low noise amplifiers,inalas,ingaas,mhemt lna mmic,frequency 110 ghz,frequency 220 ghz,gain 16.6 db,gain 17.7 db,metamorphic high electron mobility transistors technology,monolithic low-noise amplifier,noise figure 3.6 db,noise figure 4.3 db,size 100 nm,logic gates,noise figure

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