High Performance 14nm SOI FinFET CMOS Technology with 0.0174µm2 Embedded DRAM and 15 Levels of Cu Metallization

C-H. Lin,B. Greene,S. Narasimha,J. Cai,A. Bryant,C. Radens,V. Narayanan,B. Linder, H. Ho, A. Aiyar,E. Alptekin, J-J. An,M. Aquilino,R. Bao,V. Basker,N. Breil,M. Brodsky, W. Chang,L. Clevenger,D. Chidambarrao, C. Christiansen, D. Conklin,C. DeWan, H. Dong,L. Economikos, B. Engel, S. Fang, D. Ferrer, A. Friedman,A. Gabor,F. Guarin, X. Guan, M. Hasanuzzaman, J. Hong, D. Hoyos,B. Jagannathan, S. Jain, S-J. Jeng, J. Johnson, B. Kannan, Y. Ke,B. Khan, B. Kim,S. Koswatta,A. Kumar, T. Kwon,U. Kwon,L. Lanzerotti, H-K Lee, W-H. Lee, A. Levesque, W. Li, Z. Li, W. Liu, S. Mahajan,K. McStay,H. Nayfeh, W. Nicoll,G. Northrop, A. Ogino,C. Pei, S. Polvino, R. Ramachandran,Z. Ren,R. Robison,I. Saraf,V. Sardesai, S. Saudari,D. Schepis,C. Sheraw,S. Siddiqui,L. Song, K. Stein, C. Tran,H. Utomo,R. Vega, G. Wang, H. Wang, W. Wang, X. Wang, D. Wehelle-Gamage,E. Woodard, Y. Xu, Y. Yang, N. Zhan, K. Zhao, C. Zhu, K. Boyd,E. Engbrecht,K. Henson,E. Kaste,S. Krishnan, E. Macieje Ski,H. Shang,N. Zamdmer,R. Divakaruni, J. Rice,S. Stiffler,P. Agnello

2014 IEEE International Electron Devices Meeting（2014）

引用 169|浏览13

关键词

CMOS integrated circuits,DRAM chips,MOSFET,doping,microprocessor chips,semiconductor device metallisation,semiconductor device reliability,silicon-on-insulator,system-on-chip,4th generation deep trench,CMOS technology,Cu,Cu metallization,FE-BE reliability,HP server microprocessors,LP ASIC,Lgate modulation,SOI FinFET,Si,SoC applications,clock distribution,device optimization,dual work function process,embedded DRAM,heavy doping,hierarchical BEOL,power supply,size 14 nm,ultra-dense memory solution

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