BOX-less waveguide Ge PD for bulk-Si based silicon photonic platform

Ji, H.-C., Cho, K.S.,Lee, B.S.,Cho, K.Y.,S. H. Choi,J. H. Kim,Y. H. Shin,S. G. Kim,S. Y. Lee,H. I. Byun,S. Parmar,A. H. Nejadmalayeri, D. H. Kim,J. K. Bok, Y. S. Park,D. J. Shin, I. S. Joe, B. J. Kuh,B. S. Kim,K. C. Kim,H. M. Choi,K. H. Ha

Optical Fiber Communications Conference and Exhibition（2014）

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摘要

We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).

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关键词

elemental semiconductors,germanium,integrated optics,optical waveguides,photodiodes,silicon,BOX-less waveguide Ge PD,Ge,Si,Si-core layer,bit rate 25 Gbit/s,bulk-Si based silicon photonic platform,bulk-Si optical interface platform,current 350 nA,defective crystalline,high speed operation,low dark current,responsivity

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