Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

Chihcheng Shih,Kuanchang Chang,Tingchang Chang,Tsungming Tsai,Rui Zhang,Junghui Chen,Kaihuang Chen,Taifa Young,Hsinlu Chen,Jenchung Lou,Tianjian Chu,Syuanyong Huang,Dinghua Bao,S M Sze

Electron Device Letters, IEEE （2014）

引用 52|浏览62

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摘要

Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and characterized in this paper. The resistive switching properties were affected severely through oxygen manipulation by UV light irradiation. To clarify the switching mechanism, conduction current fitting was applied and meanwhile a reaction model was proposed to explain the origin of drastic current variation. UV light-assisted oxygen manipulation in ZnO RRAM is an efficient method to modify device switching behavior, and this investigation also unveils the interesting phenomenon of transparent electrode RRAM under UV light illumination condition.

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关键词

ii-vi semiconductors,electrochemical electrodes,photoelectrochemistry,random-access storage,switching circuits,wide band gap semiconductors,zinc compounds,rram,uv light illumination condition,uv light-assisted oxygen manipulation,zno,conduction current fitting,drastic current variation,photosensitivity,resistive switching modification,resistive switching property,transparent electrode,transparent electrode resistive random access memory,current conduction mechanism,current conduction mechanism.,ultra-violet light,lighting,electron devices,zinc oxide,switches,resistance,ions

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