Impact of contact and local interconnect scaling on logic performance
VLSI Technology（2014）
摘要
We perform a comparative analysis of metal-Si and metal-insulator-Si (MIS) contacts and quantify the impact of the contact/via resistances on logic performance. Our results show that silicide contacts account for 32% degradation in the ON current of an nFinFET (ION) compared to ideal contact. MIS contacts which lead to lowering of Schottky barrier height provide 12% performance gain at iso-energy. Technology scaling to 5 nm will make MIS contact contribute 35% to the overall extrinsic resistance, with metal resistance contribution rising to 20%.
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关键词
mosfet,schottky barriers,schottky gate field effect transistors,electrical contacts,elemental semiconductors,interconnections,silicon,mis contact,on current degradation,schottky barrier height,si,contact-via resistance,local interconnect scaling,logic performance,metal resistance contribution,metal-si contact,metal-insulator-si contact,nfinfet,overall extrinsic resistance,silicide contact,resistance,metals,contact resistance
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