Thin-Body Esd Protections In 28nm Utbb-Fdsoi: From Static To Transient Behavior

Yohann Solaro,Pascal Fonteneau,Charles-Alexandre Legrand,David Marin-Cudraz,Jeremy Passieux, Pascal Guyader,Laurent-Renaud Clement,Claire Fenouillet-Beranger,Philippe Ferrari,Sorin Cristoloveanu

Electrical Overstress/Electrostatic Discharge Symposium（2014）

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摘要

Innovative Ultra-Thin Body and Buried Oxide FDSOI protections (BBC-T and Z(2)-FET) are characterized and analyzed in order to assess the CDM time domain behavior. In addition to static (leakage and triggering) control, it is found that front and back gate coupling is a very efficient way to improve the transient responses of the proposed devices.

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关键词

electrostatic discharge,field effect transistors,silicon-on-insulator,transient response,BBC-T,CDM time domain behavior,UTBB-FDSOI,Z2-FET,back gate coupling,front gate coupling,innovative ultra-thin body and buried oxide FDSOI protections,size 28 nm,static leakage control,static triggering control,thin-body ESD protections,transient behavior,transient responses

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