Flexible high-performance nonvolatile memory by transferring GAA silicon nanowire SONOS onto a plastic substrate
Electron Devices Meeting(2014)
摘要
Flexible nonvolatile memory is demonstrated with excellent memory properties comparable to the traditional wafer-based rigid type of memory. This achievement is realized through the transfer of an ultrathin film consisting of single crystalline silicon nanowire (SiNW) gate-all-around (GAA) SONOS memory devices onto a plastic substrate from a host silicon wafer.
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关键词
field effect memory circuits,flexible electronics,nanowires,plastics,random-access storage,silicon,gaa silicon nanowire sonos,si,flexible nonvolatile memory,gate-all-around sonos memory,high performance nonvolatile memory,plastic substrate,single crystalline silicon nanowire,ultrathin film
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