Flexible high-performance nonvolatile memory by transferring GAA silicon nanowire SONOS onto a plastic substrate

Electron Devices Meeting（2014）

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摘要

Flexible nonvolatile memory is demonstrated with excellent memory properties comparable to the traditional wafer-based rigid type of memory. This achievement is realized through the transfer of an ultrathin film consisting of single crystalline silicon nanowire (SiNW) gate-all-around (GAA) SONOS memory devices onto a plastic substrate from a host silicon wafer.

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关键词

field effect memory circuits,flexible electronics,nanowires,plastics,random-access storage,silicon,gaa silicon nanowire sonos,si,flexible nonvolatile memory,gate-all-around sonos memory,high performance nonvolatile memory,plastic substrate,single crystalline silicon nanowire,ultrathin film

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