A 3.2-GHz 1.3-mW ILO phase rotator for burst-mode mobile memory I/O in 28-nm low-leakage CMOS
European Solid State Circuits Conference（2014）
摘要
This paper presents a 7-bit 3.2-GHz injection-locked oscillator (ILO) based phase rotator for burst-mode mobile memory I/O. Phase shifting is achieved by selecting the injection point and offsetting the natural frequency of the ILO from that of the injected clock. The circuit implements two techniques that enable its use in burst-mode systems: 1) synchronous stopping and restarting of the ILO achieved by strong injection, as opposed to a relatively weak injection during normal operation, and 2) phase characteristic calibration that allows continuous, infinite-throw phase rotation needed for link timing calibration. The circuit is implemented in a 1-V low-leakage 28-nm CMOS process. Power consumption and area are 1.3 mW and 0.03 mm2.
更多查看译文
关键词
CMOS memory circuits,MMIC oscillators,MMIC phase shifters,field effect MMIC,injection locked oscillators,ILO phase rotator,burst-mode mobile memory I/O,continuous infinite-throw phase rotation,frequency 3.2 GHz,injected clock,injection point selection,injection-locked oscillator,link timing calibration,low-leakage CMOS,low-leakage CMOS process,natural frequency,phase characteristic calibration,phase shifters,phase shifting,power 1.3 mW,synchronous stopping,voltage 1 V,word length 7 bit,injection-locked oscillators,phase shifters
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要