Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell

Ueda, A.,Seung-Min Jung, Mizutani, T.,Kumar, A.

VLSI Technology（2014）

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Abstract

A Vth self-adjusting MOSFET consisting of floating gate is proposed and the ultra-low voltage operation of the Vth self-adjustment and SRAM cell at as low as 0.1V is successfully demonstrated. In this device, Vth automatically decreases at on-state and increases at off-state, resulting in high Ion/Ioff ratio as well as stable SRAM operation at low Vdd. The minimum operation voltage at 0.1V is experimentally demonstrated in 6T SRAM cell with Vth self-adjusting nFETs and pFETs.

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Key words

MOSFET,SRAM chips,low-power electronics,SRAM cell,floating gate,minimum operation voltage,self-adjusting MOSFET,self-adjusting nFETs,self-adjusting pFETs,ultra-low voltage operation,voltage 0.1 V

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