A simplified process flow for silicon heterojunction interdigitated back contact solar cells: Using shadow masks and tunnel junctions
Photovoltaic Specialist Conference（2014）
Abstract
A novel process flow, which can allow the formation of interdigitated p- and n-type a-Si strips and corresponding transparent conductive oxide (TCO) and metal layers for silicon heterojunction interdigitated back contact (SHJ-IBC) solar cells using only a single alignment step and without using any resist patterning is presented. The flow is based on the deposition of a-Si, TCO and metal layers through a stack of shadow masks. Three variation of the flow are described. Several key process components to include a-Si deposition and H2 plasma etch through the shadow mask are demonstrated and described.
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Key words
amorphous semiconductors,elemental semiconductors,masks,semiconductor heterojunctions,silicon,solar cells,tunnelling,h2 plasma etch,shj-ibc solar cells,tco,interdigitated p-type amorphous-silicon strips,metal layers,n-type amorphous-silicon strips,shadow masks,silicon heterojunction interdigitated back contact solar cells,simplified process flow,single alignment step,transparent conductive oxide,tunnel junctions,contact formation,interdigitated back contact,silicon heterojunction,solar cell,strips,heterojunctions,plasmas,films
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