Shunt Characterization Technique Of Decoupling Transmission Line For Millimeter-Wave Cmos Amplifier Design

A shunt characterization method is proposed to characterize a very low impedance transmission line (TL), which is used for decoupling of DC and RE in millimeter-wave CMOS circuits. Since metal-insulator-metal (NUM) capacitors are used to achieve very low impedance the TL named as MINI TL. Two structures are used for this method. S-parameters of MIM TL are calculated using reflections. The results match better than direct measurement method from 1 to 110 GHz.