Nanometer InP electron devices for VLSI and THz applications

Mark J W Rodwell,Sangrim Lee,Chienyi Huang,Diego Elias, V Chobpattanna,Johann C Rode,Hanwei Chiang,P K Choudhary,Robert J Maurer,M Urteaga,B S Brar,A C Gossard,Susanne Stemmer

Device Research Conference（2014）

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摘要

While the growth of III-As and III-P semiconductors is well-established, and their transport properties well-understood, the performance of high-frequency and VLSI electron devices can still be substantially improved. Here we review design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including nm InAs/InGaAs planar MOSFETs and finFETs for VLSI, InGaAs/InP DHBTs for 0.1-1 THz wireless communications and imaging, and ~5nm InAs/InGaAs Schottky diodes for mid-IR mixing.

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关键词

iii-v semiconductors,mosfet,schottky diodes,vlsi,arsenic,gallium arsenide,heterojunction bipolar transistors,indium compounds,phosphorus,radiocommunication,terahertz wave devices,terahertz wave imaging,dhbt,iii-arsenic semiconductors,iii-phosphorus semiconductors,inas-ingaas,ingaas-inp,thz electron devices,vlsi electron devices,finfet,frequency 0.1 thz to 1 thz,high-frequency electron devices,mid-ir mixing,nanometer indium phosphide electron devices,planar mosfet,transport properties,wireless communication,logic gates,dielectrics,very large scale integration

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