A low-power, low-noise, highly-linear receiver for 122 GHz applications in a SiGe BiCMOS technology

Abhiram Chakraborty,Saverio Trotta,K Aufinger,Rudolf Lachner,Robert Weigel

Silicon Monolithic Integrated Circuits in Rf Systems（2014）

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摘要

This paper presents a low power receiver front-end for 122 GHz applications designed in a 0.13μm SiGe:C BiCMOS technology featuring HBTs with fT of 250 GHz and fmax of 360 GHz. The receiver comprises of an active down-conversion mixer, an LO buffer, and an IF buffer with integrated baluns for single-ended to differential conversion. The receiver achieves a minimum single sideband noise figure of 10 dB, a conversion gain greater than 19 dB and an input-referred 1-dB compression point of -7 dBm at an IF of 10 MHz for input signals between 121 and 126 GHz. The circuit consumes only 50 mW from a 3.3 V power supply. The LO residual power at the RF port is less than -30 dBm.

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关键词

bicmos analogue integrated circuits,ge-si alloys,baluns,bipolar mimic,buffer circuits,carbon,heterojunction bipolar transistors,low-power electronics,millimetre wave mixers,millimetre wave receivers,hbt,if buffer,lo buffer,sige:c,sige:c bicmos technology,active down-conversion mixer,frequency 121 ghz to 126 ghz,highly-linear receiver,integrated baluns,low-noise receiver,low-power receiver,noise figure 10 db,power 50 mw,size 0.13 mum,voltage 3.3 v,122 ghz,bicmos,receiver,sige,high-linearity,low-noise,low-power,gain,noise figure

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