Solution-Processed Indium–Zinc-Oxide Thin Film Transistors With High- Magnesium Titanium Oxide Dielectric

In this letter, magnesium-titanium oxide (MTO) thin films were prepared through a solution-processing method. Variation of permittivity, leakage properties, and optical bandgap of the MTO thin films with different Ti content were investigated. The amorphous indium-zinc oxide thin-film transistors (TFTs) using Mg0.6Ti0.4O as gate dielectric exhibited a small subthreshold swing of 0.32 V/decade, moderate field-effect mobility of 3.41 cm2/Vs, low threshold voltage of -0.9 V, and large ON/OFF current ratio of ~ 6×106. These results demonstrate the potential application of solution-processed MTO thin films as a promising gate dielectric layer in oxide-TFTs.