Characterisation Of Inas/Gaas Quantum Dots Intermediate Band Photovoltaic Devices

Edson Garduno-Nolasco,Peter J. Carrington,Anthony Krier,Mohamed Missous

Optoelectronics, IET （2014）

引用 3|浏览3

暂无评分

摘要

The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 x 10(10)cm(-2), respectively, in between the QD layers. Under a 1 sun illumination, the open-circuit voltage (V-oc) and the efficiency of the 8 x 10(10)cm(-2) n-doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V-oc of 0.70 V and an efficiency of 9.0%). However, the short-circuit current density (J(sc)) decreased from 20.1 to 17.4 mA/cm(2) indicating bandfilling within the QD array.

查看译文

关键词

electric properties,gallium arsenide,III-V semiconductors,indium compounds,molecular beam epitaxial growth,optical properties,photovoltaic cells,quantum optics,semiconductor epitaxial layers,semiconductor quantum dots,short-circuit currents,solar cells,wide band gap semiconductors,photovoltaic devices,indium arsenide-gallium arsenide quantum dots,structural properties,optical properties,electrical properties,solar cells,molecular beam epitaxy,n dopant sheet densities,QD layers,sun illumination,open-circuit voltage,short-circuit current density,bandfilling,QD array,voltage 0,73 V,voltage 0,70 V,InAsa'GaAs

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要