Through Silicon Via (TSV) Effects on Devices in Close Proximity - the Role of Mobile Ion Penetration - Characterization and Mitigation

C. Kothandaraman,S. Cohen,C. Parks,J. Golz,K. Tunga,S. Rosenblatt,J. Safran,C. Collins,W. Landers,J. Oakley,J. Liu, A. J. Martin,K. Petrarca,M. Farooq,T. L. Graves-Abe,N. Robson,S. S. Iyer

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2014）

Cited 6|Views58

Key words

electrostatics,ion mobility,three-dimensional integrated circuits,BEOL layers,DRAM,SIMS,TSV processes,TVS characterisation,mechanical stress,mobile ion penetration,through silicon via,triangular voltage sweep

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