A Ku-band 20 W GaN-MMIC amplifier with built-in linearizer

Microwave Symposium(2014)

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摘要
This report describes a Ku-band amplifier GaN MMIC. The amplifier MMIC delivers a measured saturated power of 20 W and gain of 20 dB under CW operation. To enhance the linearity of the two stage amplifier composed of the MMIC and GaN Internally Matched FET, a diode linearizer has also been built into the MMIC. The linearizer offers 5dB better linear output power, defined the output power at IM3 of -25 dBc, compared with that of MMIC without the linearizer. To our knowledge, this is the first report to present GaN-based high power amplifier MMIC with a built-in linearizer which can enhance the linearity of a PA system.
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hemt integrated circuits,iii-v semiconductors,mmic amplifiers,field effect mmic,gallium compounds,linearisation techniques,wide band gap semiconductors,gan,ku-band amplifier,mmic amplifier,builtin linearizer,continuous wave operation,gain 20 db,internally matched fet,power 20 w,two stage amplifier,im3,mmic,amplifier,linearizer
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