Germanium-lead alloy with 0.3% substitutional lead formed by pulsed laser induced epitaxy

Qian Zhou,Chunlei Zhan,Xiao Gong,T K Chan,T Osipowicz,S L Lim,Eng Soon Tok,Yeechia Yeo

Silicon-Germanium Technology and Device Meeting（2014）

Cited 3|Views7

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Abstract

For the first time, single crystalline GePb was formed using sputtering and laser induced epitaxy. The GePb alloy shows a good crystalline quality without Pb precipitation or clustering. No dislocation is observed at the interface between GePb and Ge. HRBS data indicates that substitutional Pb content of ~0.3% was obtained.

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Key words

rutherford backscattering,germanium alloys,lead alloys,metallic epitaxial layers,pulsed laser deposition,sputter deposition,gesb,hrbs,germanium-lead alloy,high-resolution rutherford backscattering spectrometry,pulsed laser induced epitaxy,sputtering,decision support systems

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