Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

Yi Tong,Qian Zhou,Kain Lu Low,Lan Xiang Wang,Lye Hing Chua,Thirumal Thanigaivelan,Todd Henry,Yeechia Yeo

Electron Devices, IEEE Transactions （2014）

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摘要

We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (ΦnB) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of ΦnB caused by S.

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关键词

schottky barriers,amorphisation,electrical contacts,elemental semiconductors,ion implantation,nickel compounds,silicon,sulphur,nisi,nisi contact formation technique,nisi film agglomeration,nisi-n-si interface,pai,s,si,cold silicon preamorphization implant,donor-like traps,effective schottky barrier height,n-type si,nickel silicide contact formation technique,presilicide sulfur implant,silicidation,cold silicon implant,schottky barrier height (sbh),nickel silicide (nisi),sulfur (s) segregation

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