Composition profiles in InP/InAsP quantum well structures under the effect of reactives gases during dry etching processes — Luminescence and SIMS
Indium Phosphide and Related Materials（2014）
Abstract
We have investigated the effects of reactive gases used during the deep reactive ion etching process of InP-based photonic structures in an inductively-coupled plasma (ICP) reactor. Samples with a specific structure, including 9 InAsP/InP quantum wells (QW) with graded As/P composition, were designed. Different chlorine-based gas chemistries were tested. Characterization was performed using cathodo-Iuminescence (CL) and photo-luminescence (PL) at different temperatures, and secondary ion mass spectrometry (SIMS). The luminescence lines display a blue shift upon exposure to the reactive gases, and a strong spectral sharpening. We discuss the influence of Cl diffusion and thermal processes during etching on these modifications.
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Key words
iii-v semiconductors,cathodoluminescence,diffusion,indium compounds,photoluminescence,plasma materials processing,secondary ion mass spectra,semiconductor quantum wells,spectral line shift,sputter etching,cl diffusion,inp-inasp,inp-inasp quantum well structures,inp-based photonic structures,sims,blue shift,cathodoiuminescence,chlorine-based gas chemistries,composition profiles,deep reactive ion etching process,dry etching processes,graded as-p composition,inductively-coupled plasma reactor,luminescence lines,reactives gas effect,secondary ion mass spectrometry,spectral sharpening,thermal processes,luminescence,dry etching
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